I-CVD Tantalum Carbide (TaC) yoMgquba

Ukwambathiswa kweTaC kudla ngokuqwalaselwa xa iSiC iqala ukufikelela kwimida yayo. Oku kwenzeka rhoqo kwiSiC epitaxy okanye ukukhula kwekristale, apho ubushushu kunye nomoya wenkqubo zifuna kakhulu.

Njengoko i-TaC ikwindawo yokunyibilika ephezulu kakhulu, iphatha ukuvezwa kobushushu obuphezulu ixesha elide ngcono, ingakumbi kwiindawo ezine-hydrogen okanye i-HCl. Enyanisweni, oku kwenza umahluko kwiinkqubo ezifana nokukhula kwe-PVT, apho ukuzinza kobushushu kuchaphazela ngokuthe ngqo umgangatho wekristale.

Izicelo eziqhelekileyo ziquka izangqa zesikhokelo sokuhamba kwamanzi, izibambi zembewu, iindawo ezinxulumene nokubethelwa, kunye nezinye izakhiwo ngaphakathi kwintsimi yobushushu. Ezi zinto zichatshazelwa kwiimeko ezinzima ixesha elide, ngoko ke ukunciphisa ukuwohloka kuba yinto ebalulekileyo. Kwezinye izinto ezisetyenzisiweyo, i-TaC ithatha indawo yezinto ezindala ezinje nge-pBN, kwanezinye iindawo ezine-SiC-coated, nangona oku kusaxhomekeke kwixabiso kunye noyilo lwenkqubo.