I-CVD Silicon Carbide (SiC) Ukugquma

I-CVD SiC coating ngokuyintloko yi-silicon carbide layer ebekwe kwi-graphite, kwaye isetyenziswa kakhulu kwizixhobo ze-epitaxy apho ubushushu kunye nococeko kubalulekile. Kwimigca yokwenyani yemveliso, uya kuyibona rhoqo kwiinkqubo ezivela kwi-AIXTRON, ASM/LPE, Veeco, kunye namanye amaqonga anxulumene ne-AMAT. Okuyenza ibe luncedo ayikokumelana nobushushu kuphela, kodwa kukuzinza ngokubanzi ngexesha elide. Phantsi kweemeko eziqhelekileyo ze-epitaxy - i-hydrogen, i-ammonia, okanye neegesi ze-chlorine - i-coating ihlala izinzile kwaye ikhusela i-graphite engaphantsi. Oko kunceda ukugcina intsimi yobushushu ihambelana ngakumbi kwaye kunciphisa amathuba okubonakala kwamasuntswana ngexesha lokukhula.

Ixesha elininzi, ugqubuthelo lusetyenziswa kwiindawo ezifana nee-susceptors, ii-wafer carriers, ii-graphite rings, okanye izinto ze-half-moon. Zonke ezi zinto zibandakanyeka ngokuthe ngqo ekufudumaleni okanye ekubekeni i-wafer, ngoko ke naluphi na ungazinzi oluncinci lunokuchaphazela isivuno. Ngenxa yeso sizathu, iindawo ezigqunywe zidla ngokuphathwa njengezinto ezisetyenziswayo ezisafuna ukuthembeka kwimijikelo emininzi, ingakumbi kwimveliso ye-intshi ezi-4 ukuya kwezi-12.