Ipleyiti yokujikelezisa iTaC Coating

I-TaC Coating Rotation Plate yinxalenye ebalulekileyo ejikelezayo eyenzelwe iinkqubo ze-semiconductor eziphambili ezisebenza phantsi kweemeko ezishushu kakhulu, zekhemikhali, neze-mechanical. Kwi-Semixlab, le mveliso isetyenziswa ngokukodwa kwiindawo zokukhula kwe-epitaxial ezishushu kakhulu kunye neendawo zokucubungula ubushushu kwii-semiconductors, apho uzinzo lwexesha elide, ukufana kwenkqubo, kunye nolawulo longcoliseko zizinto eziphambili ezibangela ukuveliswa kunye nokuhambelana kwesixhobo.

Kwi-MOCVD epitaxial growth, ngakumbi kwi-GaN kunye ne-III-V compound semiconductors, i-MOCVD Rotation Plate isebenza njengecandelo eliphambili lenkqubo yokulawula ubushushu kunye nokuhamba kwentsimi ye-reactor. Ngokuvumela ulawulo oluzinzileyo noluchanekileyo lokujikeleza ngexesha lokufakwa, inceda i-avareji ye-radial temperature gradients kunye notshintsho loxinzelelo lwegesi kumphezulu we-wafer. I-dense tantalum carbide (TaC) coating iqinisekisa ukunyamezela okugqwesileyo kwiindawo ezityebileyo ze-hydrogen kunye ne-metalorganic precursor ngelixa igcina ukuthembeka komphezulu kumaqondo obushushu adlula imida yokusebenza ye-SiC yendabuko okanye izinto ezisekwe kwi-graphite. Oku kunceda ngokuthe ngqo ekuphuculeni ukufana kobukhulu, ukunciphisa uxinano lwesiphene, kunye nokuphucula ukuphindaphinda kwe-batch-to-batch.

Kwi-SiC epitaxial ukukhula kwi-4H-SiC kunye ne-6H-SiC substrates, iTantalum Carbide Coating Rotation Plate iba yinto ebaluleke ngakumbi ngenxa yobushushu obuphezulu benkqubo kunye neemeko zekhemikhali ezinamandla ngakumbi. Kule meko, ii-SiC epitaxial reactors zifuna izinto ezikwaziyo ukumelana nokuvezwa ixesha elide kwi-hydrogen atmospheres ezinobushushu obuphezulu ngaphandle kokubola kwe-coating, ukuveliswa kwamasuntswana, okanye ukungcola kwe-substrate. I-TaC's ultra-high melting point (3880°C), uxinzelelo oluphantsi lomphunga, kunye nokungangeni kakuhle kweekhemikhali zibonelela ngomqobo oqinileyo wokukhusela onciphisa ukukhukuliseka kwe-coating kwaye uthintele ukusasazeka kokungcola kwi-substrates okanye kwi-substrates.

Kwiinkqubo zokujikeleza ubushushu obuphezulu, unyango lobushushu, kunye neenkqubo zokujikeleza ubushushu ezifanayo, iTantalum Carbide Coating Rotation Plate isebenza njengojongano oluzinzileyo loomatshini kunye nobushushu, iqinisekisa intshukumo egudileyo yokujikeleza kunye nokusasazwa kobushushu okuhlala kuhleli. Ukuqina okuphezulu kobushushu kunye nokuzinza kobushushu komphezulu weTantalum Carbide (TaC) kunceda ukuzinzisa ukudluliselwa kobushushu obunemitha, ukunciphisa iindawo ezishushu zasekuhlaleni kunye noxinzelelo lobushushu. Ukusuka kokubini ukuthembeka kwenkqubo kunye neendleko zizonke zobunini, iiDiski zeTaC Coating Rotation zeSemixlab zenzelwe ukuhlangabezana neemfuno zemveliso ye-wafer fab ephezulu. Inkqubo yokugcoba yeTaC elungiselelweyo ifezekisa uxinano oluphezulu kunye nokunamathela okunamandla, inciphisa kakhulu umngcipheko wokuqhekeka okuncinci, ukususwa kwe-coating, kunye nongcoliseko lwamasuntswana. Xa kuthelekiswa neengubo zesiqhelo, ubomi benkonzo obude bunciphisa amaxesha okugcinwa kunye nexesha lokungasebenzi elingacwangciswanga.

Njengomvelisi ohamba phambili waseTshayina kunye nomzi-mveliso oqinileyo weePlati zeTaC Coating Rotation, esebenzisa ulwazi olukhethekileyo lwethiyori kunye nobuchule bobuchwephesha beSemixlab kwizixhobo zeseramikhi eziphambili kunye neenkqubo zokugquma ze-semiconductor, iiPlati zethu zeTantalum Carbide Coating Rotation ziye zaba sisisombululo esiqinisekisiweyo seenkqubo ze-MOCVD ze-semiconductor, iinkqubo zokukhula kwe-SiC epitaxial, kunye neenkqubo zobushushu obuphezulu, zibonelela ngokusebenza okuqikelelweyo kwexesha elide kwiifabs. Okubaluleke ngakumbi, iSemixlab isazimisele ekuboneleleni ngesikhokelo sobugcisa esiphambili kunye nezisombululo ezenzelwe wena kwintsimi ye-epitaxy ye-semiconductor. Silangazelela ngokwenene ukuba liqabane lakho lexesha elide eTshayina.