Indandatho egqunywe yiTaC yeSiC Epitaxial Reactor

Kwi-silicon carbide epitaxial reactors, amaqondo obushushu okusebenza adla ngokudlula i-1600 °C phantsi kwe-atmospheres e-hydrogen erhabaxa kakhulu kunye ne-chlorine. Ukusebenza kwezixhobo zokulawula umda kunye nomda kuchaphazela ngokuthe ngqo umgangatho womaleko we-epitaxial, ukuhambelana kwemveliso, kunye nexesha lokusebenza kwezixhobo. Iiringi zokugquma ze-tantalum carbide (TaC) ze-Semixlab zenzelwe ngokukodwa ukuhlangabezana nezi mfuno zinzima kwiindawo zokuvelisa ngobuninzi. Ezi ringi zisebenza njengezixhobo ezibalulekileyo ezisebenzayo zobushushu obuphezulu kwi-SiC epitaxial reactors, ukuqinisekisa uzinzo lwenkqubo yexesha elide, ukukhula okufanayo kwe-epitaxial, kunye nokucoceka kwe-reactor.

Kwiinkqubo ze-SiC epitaxy, iiringi zokugquma ze-tantalum carbide (TaC) zibekwe kufutshane nee-wafer edges okanye kwiindawo zokutshintsha kwe-reactor ukuze kuhambe ubushushu kunye negesi. Umsebenzi wazo oyintloko kukuzinzisa ii-gradients zobushushu bendawo kunye nokuziphatha kwe-vapor-phase reaction kwi-wafer edges—iindawo ezithandwa kakhulu kukubekwa kwe-parasitic okungalawulwayo kunye nokungalingani komphetho. Ngokuchaza ngokuchanekileyo imida ye-reaction kunye nokuthintela ukufakwa kwe-silicon kunye ne-carbon okungafunekiyo, ezi ringi zokugquma ziphucula ngokufanelekileyo ukufana kobukhulu be-epitaxial kunye nokuhambelana kwe-dopant kwii-wafers ze-SiC ezinkulu.

I-Semixlab ikhethe i-tantalum carbide coating ngenxa yokuzinza kwayo okumangalisayo kobushushu, ukungangeni kweekhemikhali, kunye nokumelana nokugqwala kwe-halide. Njengoko inqanaba lokunyibilika lidlula i-3880 °C kwaye ihambelana kakuhle ne-H₂, i-HCl, kunye nezinye iikhemikhali ezigqwalisayo ezisetyenziswa kakhulu kwiinkqubo ze-silicon carbide epitaxy, i-TaC ikhusela ngokufanelekileyo i-substrate engaphantsi ekukhukulisekeni nasekuwohlokeni kwesakhiwo. Esi sakhiwo se-coating esinoxinano oluphezulu, esingenamibhobho iphantsi sinciphisa ukuveliswa kwamasuntswana, sinciphisa umngcipheko wee-microcracks okanye i-delamination, kwaye siqinisekisa iimeko ezizinzileyo ze-reactor ngexesha lemijikelo yokusebenza ende.

Xa kuthelekiswa nezisombululo ze-silicon carbide zemveli okanye i-graphite susceptor, ukuguguleka okuphezulu kunye nokumelana nokugqwala kweTantalum Carbide Coating kwandisa kakhulu ubomi becandelo, ngaloo ndlela kunciphisa amaxesha okugcinwa kunye nokushukuma kwenkqubo okunxulunyaniswa nokutshintshwa kwecandelo. Ngokwembono yeendleko zemveliso, iringi yeTantalum Carbide Coating iphucula ukuphindaphindwa kwenkqubo kunye nokusebenza kakuhle kweendleko. Kwimigca yemveliso ye-epitaxial ephezulu kunye nokuveliswa kwezixhobo zamandla eziphambili, olu zinzo luthetha isivuno esiphezulu, ukusetyenziswa kwezixhobo ngokufanelekileyo, kunye neendleko zemveliso eziphantsi.

Njengeshishini lobuchwepheshe eliphambili kwicandelo leenkqubo ze-epitaxial ze-semiconductor eTshayina, i-Semixlab inolwazi olunzulu kubuchwepheshe obuphambili bokugquma kunye nezixhobo zenkqubo ye-semiconductor. I-TaC Coated Ring yethu ye-SiC Epitaxial Reactor iqinisekisiwe ukuba iya kuphuhliswa kwaye yenziwe phantsi kwemigangatho yolawulo lomgangatho olungqongqo kakhulu. I-Semixlab isazimisele ukubonelela ngetekhnoloji entsha kunye nezisombululo ze-TaC Coated Ring ze-SiC Epitaxial Reactor ezenziwe ngokwezifiso kushishino lwe-semiconductor. Silangazelela ukuba liqabane lakho lexesha elide eTshayina.