I-Tantalum carbide enemingxuma TaC
Izinto zeTaC ezinemingxuma eziqaliswe yiSemixlab, ezenzelwe ukulawula intsimi yobushushu kunye nokuphucula ukukhula kwekristale yeSiC, zixabisa uphando olubalulekileyo kunye namathuba okusebenzisa athembisayo. Ngexesha lokukhula kwekristale yeSiC, ukufana kwentsimi yobushushu yinto ephambili echaphazela umgangatho wekristale kunye nesantya sokukhula. I-Tantalum carbide (TaC) yinto ephawulwa yindawo yokunyibilika ephezulu, ubulukhuni obuphezulu, kunye nokuqhuba okuphezulu kobushushu. Igcina iipropati zoomatshini ezizinzileyo kumaqondo obushushu aphezulu, ngelixa inika ubomi benkonzo ende kunye neendleko zokusebenza eziphantsi zexesha elide. Silindele imibuzo yakho engaphezulu.
inkcazelo
I-Semixlab ingenise izinto zegrafiti ezinemibhobho ezigqunywe nge-tantalum carbide (TaC). Isebenzisa iskeleton segrafiti esinemibhobho esinemibhobho elawulekayo (50%–75%) ukuze isebenzise indawo yayo enkulu yomphezulu ukuze iqondise ukuhamba kwegesi kunye nokuhluza. Ngokusebenzisa itekhnoloji ye-CVD, i-TaC coating exineneyo (indawo yokunyibilika: 3880 °C) ifakwa kwiindawo zangaphakathi nezangaphandle, nto leyo enika le nto ukumelana nobushushu obuphezulu kakhulu kunye nokumelana nokugqwala kwe-H₂ (ngaphezulu kwezihlandlo ezili-10 kuneengubo zeSiC eziqhelekileyo). Uyilo olulodwa lwe-gradient transition layer luqinisekisa utshintsho oluthambileyo lwe-thermal expansion coefficient, oluthintela i-coating ukuba ingaqhekeki okanye ixobuke phantsi koxinzelelo oluphindaphindwayo lobushushu. Olu lwakhiwo lwenza imisebenzi emine ephambili ekukhuleni kwekristale yeSiC: isebenza njengesihluzi esichanekileyo sokuthintela ukungcola kwamasuntswana, ilawula ngokuchanekileyo intsimi yobushushu ngokusebenzisa i-TaC's high thermal conductivity ukulawula izinga lokukhula, ikhokela ukuhamba kwegesi kwicala elithile kwisakhiwo se-pore ukukhuthaza ukukhula kwekristale okufanayo, kunye nokugcina umoya ozinzileyo ngokusebenzisana komphezulu oxineneyo kunye nangaphakathi okunemingxuma, ngaloo ndlela iphucula kakhulu imveliso yekristale kunye nokuphindaphinda kwenkqubo.



Isicwangciso esiqhelekileyo seyunithi yokufumba i-TaC: (a) isixhobo sokufaka i-chlorination kwindawo ethile; (b) i-CVD reactor.
iinkcukacha
| Iimpawu ezibonakalayo zokwaleka kwe-TaC | |
| mninzi | 14.3 (g/cm³) |
| Ukukhupha izinto ezithile | 0.3 |
| Ukunyuka kwamafutha ngokulingeneyo | 6.3*10-6/K |
| Ukuqina (HK) | 2000 HK |
| ukuxhathisa | 1 × 10-5 Ohm*cm |
| Uzinzo Thermal | <2500 ℃ |
| Ubungakanani begraphite utshintsho | -10 ~ -20um |
| Ukwaleka ubukhulu | ≥20um ixabiso eliqhelekileyo (35um±10um) |
izicelo
Imeko yokusetyenziswa kwesicelo
1. Ukusetyenziswa Okungundoqo: Ukukhula Kwekristale Eyodwa yePVT SiC
Kwinkqubo yokukhula kwekristale enye yeSiC ngendlela yePVT (Physical Vapor Transport), iimveliso zethu zisetyenziswa kakhulu njengezixhobo zentsimi yobushushu ezifana nee-porous crucibles, izivikelo ze-crucible, iityhubhu zesikhokelo sokuhamba, kunye neetreyi. Xa kuthelekiswa nezixhobo zegrafiti zemveli, zinokususa ukufakwa kwekhabhoni ngokuthintela amasuntswana ekhabhoni ukuba angangeni kwikristale ukuze kuncitshiswe kakhulu iziphene ze-micropipe, kuthintelwe ukwakheka kwemingxuma ye-etch ngokugcina ubuqotho besakhiwo ngexesha lokukhula komjikelo omde ukuze kuthintelwe i-polycrystallization, kwaye kuphuculwe isivuno ngokubonelela ngendawo yokukhula ecocekileyo ukuphucula umgangatho wekristale kunye nokusebenza kakuhle kwemveliso.
2. Isicelo Esandisiweyo
①Izixhobo ze-Epitaxy ze-Semiconductor
Kwinkqubo ye-SiC epitaxy (i-LPE, izixhobo ze-MOCVD), izixhobo zethu zingasetyenziswa njengezifudumezi, iitreyi zegrafiti, kunye nee-reaction chamber liners. Ukumelana nokugqwala kwe-NH₃ kwe-TaC coating kukhusela ngokufanelekileyo izinto zegrafiti, kuthintela ukungcola, kwaye kwandisa ubomi benkonzo yecandelo, kuqinisekisa ukusebenza okuzinzileyo kwezixhobo ze-epitaxy.
Izixhobo Zokugquma ze-②PV
Kwinkqubo ye-PECVD yokwenziwa kweeseli ze-photovoltaic, iimveliso zethu zingasetyenziswa njengezinto zokugquma iinqanawa ze-graphite kunye neepleyiti zokuthwala. Ziyamelana nokugrunjwa ziiplasma ezine-fluorine/chlorine, zithintela umgubo we-graphite ukuba ungcolise ii-silicon wafers, kwaye zifanelekile kwiinkqubo zeeseli ezisebenzayo kakhulu ezifana ne-PERC kunye ne-HJT, zinegalelo ekuphuculeni umgangatho weeseli ze-photovoltaic.
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