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Igraphite enemingxuma
| Indawo yokuqala: | iTshayina | |
| Igama lebrand: | Semixlab | |
| Inani Model: | I-PG-001 | |
| yokuqinisekisa: | ISO9001 | |
| Isixa esincinci soMyalelo: | Ngokuxhomekeke kubungakanani bomntu ngamnye (inkxaso yophando kunye nophuhliso lwee-odolo zovavanyo lwebhetshi encinci) | |
| ixabiso: | Caphula ngokwemfuno elungiselelweyo (isaphulelo somthamo omkhulu) | |
| Iinkcukacha zoPakethe: | Ukupakishwa kwe-anti-oxidation enobungqina bomoya, ibhokisi yeplanga yobungqina bokuthuthumela (ngokuhambelana nemigangatho yezothutho yamazwe ngamazwe) | |
| Ixesha lokuzisa: | Iintsuku ezingama-20-45 (kuxhomekeke kubunzima bokwenza ngokwezifiso) | |
| Immimiselo yokuhlawula: | T/T (50% kwangaphambili, 50% ihlawulwe phambi kokuziswa) | |
| Supply Ukubanako: | Umthamo wemveliso wenyanga wamaqhekeza angama-3000, uxhasa imveliso yomyalelo ongxamisekileyo | |
inkcazelo
Igraphite ePorous isetyenziswa ikakhulu kwiPVT (ukudluliselwa komphunga ngokomzimba) isilicon carbide (SiC) inkqubo yokukhula kwekristale enye, yeyona nto ingundoqo yenkqubo yentsimi yobushushu obuphezulu. Imveliso yenziwe nge-ultra-high purity isostatically pressed graphite, eyenza i-uniform kunye ne-controllable porous structure ngokuchaneka kwe-CNC machining kunye neteknoloji yokulawula i-pore, iqinisekisa ukusebenza okugqwesileyo phantsi kweemeko zenkqubo egqithisileyo (2200 ℃). Uyilo lwayo olukhethekileyo luphucula kakhulu ukufana kwentsimi ye-thermal kunye nokwandisa ukusebenza kakuhle kokudluliselwa kwesigaba segesi, esisisiqinisekiso esibalulekileyo sokukhula kwe-crystal ye-SiC ephezulu.
Iimpawu eziphambili kunye neenzuzo zenkqubo:
Ukucoceka okugqithisileyo kunye nezinga eliphantsi lesiphako
Inkqubo yokucoca i-vacuum yobushushu obuphezulu (unyango lwe-3000℃) isetyenziselwa ukunciphisa ngakumbi umxholo wobumdaka obungeyontsimbi efana neoksijini kunye nenitrogen. Ukuphelisa ukungcola okubangelwa i-crystal defects (efana ne-microtubules, i-dislocations) ukuqinisekisa ukuhambelana kombane we-SiC single crystals.
Uzinzo oluphezulu lweqondo lokushisa eliphezulu kunye nolawulo lwe-thermal field
Kwimeko ye-argon / vacuum, inokumelana ne-2200 ℃ yokusebenza ngokuqhubekayo ngaphezu kweeyure ze-1000, i-coefficient ephantsi yokwandiswa kwe-thermal, kwaye ugweme ukuqhekeka kwezinto ezibangelwa uxinzelelo lwe-thermal.
I-porosity ixhasa uyilo lokusabalalisa i-gradient, idityaniswe ne-CFD yokulinganisa ukwandisa ubungakanani bepore (10-200μm), ngokuchanekileyo ukulawula ukuhanjiswa kwentsimi ye-thermal, ukunciphisa ukuguquguquka kwe-gradient yobushushu (ngaphakathi ± 3℃), kunye nokuphucula ukufana kokukhula kwekristale.
Izisombululo ngentando
Ukulungelelaniswa kwejometri: Ukuxhasa ukucwangciswa kwemilo enzima (njenge-annular crucible, i-multi-layer shield), ukuhambelana nesakhiwo somlilo wabathengi.
Unyango lomphezulu: Ukubonelela ngeenkonzo zokupolisha ezichanekileyo okanye zokugquma ukomeleza ukuxhathisa umhlwa kunye nobomi benkonzo.
Ukuqinisekiswa kokusebenza kwesicelo
Kwinkqubo ye-crystallization ye-PVT SiC, njengenxalenye ye-crucible kunye ne-thermal field:
Ukwandisa izinga lokukhula kwekristale nge-15% -20% (xa kuthelekiswa negraphite yendabuko);
Isivuno se-wafer sande ngaphezu kwe-90% (i-4 intshi ye-SiC yekristale enye);
Ixesha lokugcinwa kwesixhobo landiswa ukuya kwiinyanga ezi-6 (iinyanga ezi-3 eziqhelekileyo).
Iinkcukacha ngokukhawuleza:
1. Amanye amagama: I-PVT ye-graphite crucible, ukukhula kwe-silicon carbide kunye ne-porous graphite.
2. Isicelo: Indlela ye-PVT (indlela yokuthutha igesi yomzimba) i-SiC enye ikristale yokukhula ingundoqo yecandelo le-thermal field.
3. Iiparamitha eziphambili: ubunyulu ≥99.9995%, i-porosity 15-30%, ukumelana nobushushu 2200℃ (imeko yegesi engasebenziyo), i-thermal conductivity 100-150 W / m·K.
iinkcukacha
| Iimpawu ezibonakalayo eziqhelekileyo zegraphite evulekileyo | |
| ltm | ye parameter |
| Unizi lolwapho kuyiwa khona | 0.89 g / cm2 |
| Amandla amakhulu | 8.27 MPA |
| Ukugaya amandla | 8.27 MPA |
| Tensile strength | 1.72 MPA |
| Ukuchasa ngokuthe ngqo | 130Ω -inx10-5 |
| Umsa | 50% |
| Ubungakanani bomndilili we pore | 70um |
| Ukuqhuba Ukushisa | 12W/M*K |
izicelo
Indibano yePVT yokukhula kwesithando somlilo: Njengenxalenye ye-SiC sublimation yezinto kunye nokukhula kwekristale, ibonelela ngokusasazwa kwentsimi ye-thermal ezinzileyo.
Icandelo lokukhusela intsimi ye-Thermal: isakhiwo se-porous sinciphisa ngokufanelekileyo uxinzelelo lwe-thermal kunye nokwandisa ubomi benkonzo yezixhobo.
Isibiyeli sekristale yembewu: amandla aphezulu omatshini ukuxhasa ikristale yembewu, ukuqinisekisa ukukhula okukhokelela kwikristale.
Umaleko wokusasazwa kwerhasi: kwandisa ukusebenza kakuhle kokudluliselwa kwesigaba segesi, phucula umgangatho wekristale enye kunye nezinga lokukhula.
Ithuba elihle lokhuphiswano
Ukusebenza kobushushu obuphezulu kakhulu: akukho deformation yokuthambisa kwi-2200 ℃, exhasa ngaphezu kweeyure ze-1000 zokusebenza okuqhubekayo okuzinzileyo.
Uyilo lwentsimi ye-thermal yesiko: Idityaniswe ne-CFD yokulinganisa ukwandisa i-pore gradient, ukuphucula ukufana kwekristale kunye nesivuno.
Inkonzo yokuphindaphinda ngokukhawuleza: bonelela ngenkqubo yokuvavanya iparamitha kunye nokuhambisa isisombululo seprototype kwiiyure ezingama-72.
