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I-CVD SiC yokwaleka iinxalenye zegraphite zesiqingatha senyanga
Iinkcukacha ngokukhawuleza:
1. Amanye amagama: iSiC coated graphite half month, epitaxial furnace flow guide components,SiC epitaxial graphite susceptor.
2. Isicelo: Lungiselela ukuhamba kwegesi, ulawulo lwe-thermal field kunye ne-reaction uniform kwi-SiC epitaxial furnace, i-SiC epi-layer growth susceptor.
3. Iiparamitha eziphambili: ubunyulu ≥99.99995%, ukumelana nokushisa kwe-1600 ° C, i-thermal conductivity 300W / m · K.
inkcazelo
I-Semixlab ibonelela ngemarike nge-CVD SiC egqwesileyo yokwaleka iinxalenye zegraphite zesiqingatha senyanga njengenxalenye yenkxaso engundoqo yegumbi lokusabela. Ngokusebenzisa uyilo oluphindwe kabini lwezixhobo kunye nezakhiwo, lubonelela ngemeko yenkqubo enobushushu obuphezulu, inertia yeekhemikhali ephezulu kunye nomngcipheko ophantsi wongcoliseko lweSiC epitaxial ukukhula. Kuye kube yinto esetyenziswayo engundoqo ukutyhutyha i-bottleneck yemveliso yobuninzi yamaphepha amakhulu kunye ne-low-defect epitaxial sheets.
Kwisiseko sokwenziwa kwe-chip semiconductor, ukuzinza kwenkqubo yokukhula kwe-epitaxial inquma ngokuthe ngqo ukusebenza kunye nesivuno sesixhobo. I-CVD SiC yokwambathisa iinxalenye zegraphite zesiqingatha senyanga, njengezona zinto zisetyenziswayo zokuphatha iiwafers kwizixhobo ze-epitaxial, ngokuphumelela kwezinto eziphathekayo kunye nobuchwepheshe bokucombulula itekhnoloji, Isombulula ingxaki yelahleko ekhawulezileyo kunye nokungcoliseka kweendibano zegraphite eziqhelekileyo kubushushu obuphezulu (1200-1800 ℃) kunye negesi eyingozi kakhulu.4/C3H8/H2. Icandelo lenziwe ngococeko oluphezulu lwe-isostatic olucinezelekileyo lwe-SGL i-graphite substrate ene-50μm eshinyeneyo ye-silicon carbide yokwambathisa kumphezulu ngenkqubo yokubeka umphunga wekhemikhali (CVD), edibanisa i-thermal conductivity yegraphite kunye nokumelana nobushushu obugqithisileyo be-silicon carbide. I-geometry yayo ekhethekileyo yesiqingatha senyanga (i-180 ° ± 5 ° i-arc, i-diameter yangaphandle ye-4/6/8 ye-intshi yesixhobo) iphucula ukufana kobunzima bomaleko we-epitaxial ukuya ngaphakathi kwe-± 1.5% ngokulungisa indlela yokuhamba kunye nokusabalalisa intsimi ye-thermal, ngelixa ivimbela ukusasazwa kokungcola kwesinyithi (i-Fe kunye ne-Al content <0.1ppm) kwi-wavestrate substrate. Ubuninzi besiphako somgangatho we-epitaxial buncitshiswe ngaphantsi kwe-0.05cm-2.
Ubukhulu:
6 intshi, 8 intshi, 12 intshi.
iinkcukacha
| Iimpawu ezisisiseko ze-CVD SiC coating | |
| ipropati | Ixabiso eliqhelekileyo |
| Ulwakhiwo lweCrystal | I-FCC β isigaba se-polycrystalline, ikakhulu (i-111) ejoliswe kuyo |
| mninzi | 3.21 g / cm³ |
| ukuqina | 2500 Vickers ubunzima (500g umthwalo) |
| Ubungakanani bengqolowa | 2 ~ 10μm |
| Ucoceko lweMichiza | 99.99995% |
| Ubungakanani bobushushu | 640 J·kg-1·K-1 |
| Iqondo lobushushu elisezantsi | 2700 ℃ |
| Amandla oMbane | 415 MPa RT 4-point |
| Imodulus yolutsha | 430 Gpa 4pt bend, 1300℃ |
| Ukuqhuba kobushushu | 300Wm-1K-1 |
| Ukwandiswa kweThermal(CTE) | 4.5 × 10-6K-1 |
izicelo
I-SiC epitaxial layer yokukhula kwegraphite susceptor.
I-gas inlet diversion kunye nolawulo lwe-thermal field kwi-SiC epitaxial ukukhula kwesithando somlilo.
Okwangoku, itekhnoloji isetyenzisiwe kumgca we-silicon wafer epitaxy omkhulu wemveliso yabavelisi abahamba phambili be-semiconductor e-China, ukukhuthaza isivuno esiphakathi sezixhobo ze-SiC MOSFET ukusuka kwi-90% ukuya kwi-98%, kunye nokunciphisa iindleko ze-epitaxy zesithando somlilo esinye nge-40%. Kwixesha elizayo, kunye nokukhawuleziswa kwenkqubo yokuvelisa i-SiC ye-intshi ye-8-intshi, ukuveliswa okuhlanganisiweyo kwe-gradient composite coating (SiC / Si₃ N₄) kunye nemodyuli yokulawula i-thermal ehlakaniphile iya kukhuthaza icandelo lokudlala ixabiso leshishini eliphambili kwizicelo ze-voltage ze-ultra-high ezifana ne-aerospace kunye nemoto entsha yamandla okuqhuba umbane.
Ithuba elihle lokhuphiswano
Ukusebenza kwe-advanteji:
Kwisicelo esisebenzayo sokukhula kwe-SiC epitaxial, icandelo libonisa iinzuzo zokusebenza ngakumbi kunezixhobo zemveli: i-silicon carbide coating thermal shock cycle umthamo wamaxesha angaphezu kwama-1000 (ubushushu begumbi ukuya kwi-1800 ℃ utshintsho olukhawulezayo), ubomi benkonzo obuqhubekayo ngaphezu kweeyure ezingama-2000 (xa kuthelekiswa negraphite engafakwanga amaxesha ama-5). Ukongezelela, i-coefficient yokwandisa i-thermal (4.5 × 10-6/K) ihambelana kakhulu ne-graphite substrate (4.8×10-6/ K), ekhusela ngokufanelekileyo i-coating cracking kunye nokuchithwa kwee-particle okubangelwa uxinzelelo oluphezulu lweqondo lokushisa, kunye nokuqinisekisa umngcipheko wokungcola kwe-zero kwisithando somlilo se-epitaxial.
Uyilo lwesakhiwo esichanekileyo: isakhiwo sesikhokelo sesiqingatha senyanga silungisa ukuhanjiswa kwegesi, ukunciphisa i-turbulence kunye nokushisa kwendawo.
Ukulungelelaniswa okugqithisileyo kokusingqongileyo: Ukugquma kwe-β-SiC kuchasene ne-oxidation yeqondo lokushisa eliphezulu kunye nokukhukuliseka kwe-plasma, kwaye ubomi bayo bandiswa ngamaxesha angaphezu kwama-3.
I-Thermal field uniformity: i-thermal conductivity 300W / m · K, i-CTE kunye ne-graphite substrate match, ugweme ukuphazamiseka koxinzelelo lwe-thermal.
Inkonzo yenkqubo epheleleyo: ukuxhasa ukusetyenzwa kwe-substrate, i-coating deposition, uvavanyo lwentsebenzo yokuyeka ukuhanjiswa.
