EN 
EN
DA
NL
FI
FR
DE
IT
JA
KO
NO
PL
PT
RO
RU
ES
SV
TL
ID
SK
UK
VI
TH
TR
FA
BE
LA
UZ
I-wafer enye ye-epi graphite susceptor
| Indawo yokuqala: | iTshayina |
| Igama lebrand: | Semixlab |
| Inani Model: | SWEGS0001 |
| yokuqinisekisa: | ISO9001 |
| Isixa esincinci soMyalelo: | 1pc |
| ixabiso: | ngentando |
| Iinkcukacha zoPakethe: | Ibhokisi yokuthumela ngaphandle eqhelekileyo |
| Ixesha lokuzisa: | 30-45days |
| Immimiselo yokuhlawula: | Ukuxoxwa |
| Supply Ukubanako: | 300pcs ngenyanga |
inkcazelo
I-ASM monolithic epitaxial tray yenzelwe ukusebenza okuphezulu kwe-silicon carbide (SiC), i-gallium nitride (GaN) kunye nesinye isizukulwana sesithathu semiconductor inkqubo ye-epitaxial, imveliso ibandakanya isethi yetreyi yegraphite, iring yegraphite kunye nezinye izincedisi, usebenzisa ubunyulu obuphezulu begraphite substrate + umphunga deposition kwi-silicon carbide structure kunye nokuqina kwekhemikhali kwi-accounting, ukuthathela ingqalelo ubushushu be-silicone ukufana kwentsimi ye-thermal. Yeyona nto iphambili yokuthwala i-high-precision epitaxial sheet kwimveliso yobuninzi.
Iinkcukacha ngokukhawuleza:
1. Amanye amagama: 6 intshi wafer epi susceptor, 8 intshi wafer epi susceptor, graphite susceptor, enye wafer susceptor.
2. Isicelo: Kwi-high-performance silicon carbide (SiC), i-gallium nitride (i-GaN) kunye nenye inkqubo ye-epitaxial ye-semiconductor yesizukulwana sesithathu.
iinkcukacha
| Iimpawu ezisisiseko ze-CVD SiC coating | |
| ipropati | Ixabiso eliqhelekileyo |
| Ulwakhiwo lweCrystal | I-FCC β isigaba se-polycrystalline, ikakhulu (i-111) ejoliswe kuyo |
| mninzi | 3.21 g / cm³ |
| ukuqina | 2500 Vickers ubunzima (500g umthwalo) |
| Ubungakanani bengqolowa | 2 ~ 10μm |
| Ucoceko lweMichiza | 99.99995% |
| Ubungakanani bobushushu | 640 J·kg-1·K-1 |
| Iqondo lobushushu elisezantsi | 2700 ℃ |
| Amandla oMbane | 415 MPa RT 4-point |
| Imodulus yolutsha | 430 Gpa 4pt bend, 1300℃ |
| Ukuqhuba kobushushu | 300W·m-1·K-1 |
| Ukwandiswa kweThermal(CTE) | 4.5 × 10-6K-1 |
ImiSebenzi enguNdoqo kunye neMigqaliselo yoYilo
Izinto ezintsha ezintsha: igraphite +SiC coating
IGraphite
-Ultra-high conductivity thermal conductivity (> 130 W / m·K), ukuphendula ngokukhawuleza kwiimfuno zokulawula ukushisa, ukuqinisekisa ukuzinza kwenkqubo.
-I-coefficient yokwandisa i-thermal ephantsi (CTE: 4.6 × 10⁻⁶ / ° C), ukunciphisa ukuguqulwa kweqondo lokushisa eliphezulu, ukwandisa ubomi benkonzo.
| Iimpawu ezibonakalayo zegraphite ye-isostatic | ||
| ipropati | Unit | Ixabiso eliqhelekileyo |
| Unizi lolwapho kuyiwa khona | g / cm³ | 1.83 |
| ukuqina | HSD | 58 |
| Ukuhlaliswa kombane | μΩ.m | 10 |
| Amandla oMbane | MPa | 47 |
| Amandla anzima | MPa | 103 |
| Amandla Amandla | MPa | 31 |
| Imodulus eselula | GPA | 11.8 |
| Ukwandiswa kweThermal(CTE) | 10-6K-1 | 4.6 |
| Ukuqhuba kobushushu | W·m-1·K-1 | 130 |
| Ubungakanani bomndilili weenkozo | μm | 8-10 |
CVD SiC ukutyabeka
-Ukuxhathisa umhlwa. Ukuxhathisa ukuhlaselwa kweegesi zokuphendula ezifana ne-H₂, i-HCl, kunye ne-SiH₄. Igwema ukungcoliswa kwe-epitaxial layer ngokuguquguquka kwezinto ezisisiseko.
-Ukuxinana komphezulu: i-porosity yokwambathisa ingaphantsi kwe-0.1%, ethintela ukudibanisa phakathi kwegraphite kunye ne-wafer kunye nokuthintela ukusasazwa kokungcola kwekhabhoni.
-Ukunyamezela ukushisa okuphezulu: umsebenzi ozinzileyo wexesha elide kwindawo engaphezulu kwe-1600 ° C, ulungelelanisa imfuno yokushisa ephezulu ye-SiC epitaxy.
| Iimpawu ezisisiseko ze-CVD SiC coating | |
| ipropati | Ixabiso eliqhelekileyo |
| Ulwakhiwo lweCrystal | I-FCC β isigaba se-polycrystalline, ikakhulu (i-111) ejoliswe kuyo |
| mninzi | 3.21 g / cm³ |
| ukuqina | 2500 Vickers ubunzima (500g umthwalo) |
| Ubungakanani bengqolowa | 2 ~ 10μm |
| Ucoceko lweMichiza | 99.99995% |
| Ubungakanani bobushushu | 640 uJ·kg-1·K-1 |
| Iqondo lobushushu elisezantsi | 2700 ℃ |
| Amandla oMbane | 415 MPa RT 4-point |
| Imodulus yolutsha | 430 Gpa 4pt bend, 1300℃ |
| Ukuqhuba kobushushu | 300W·m-1·K-1 |
| Ukwandiswa kweThermal(CTE) | 4.5 × 10-6K-1 |
Intsimi yobushushu kunye noyilo lokuphucula ukuhamba komoya
Ulwakhiwo lwemitha ye-thermal efanayo
Umphezulu we-susceptor uyilwe ngee-grooves ezininzi ezibonisa i-thermal, kwaye inkqubo ye-ASM yesixhobo sokulawula i-thermal field ifezekisa ukufana kweqondo lokushisa ngaphakathi kwe-± 1.5 ° C (i-6-intshi ye-wafer, i-intshi eyi-8-intshi), iqinisekisa ukuhambelana kunye nokufana kobunzima be-epitaxial layer (fluctuation <3%).
Ubuchule bokuqhuba umoya
Imingxunya ye-Edge diversion kunye neentsika zenkxaso ezithambekeleyo ziyilelwe ukwandisa ukuhamba kwe-laminar yokusasazwa kwegesi yokusabela kumphezulu we-wafer, ukunciphisa umahluko kwizinga lokubeka okubangelwa yimisinga ye-eddy, kunye nokuphucula ukufana kwe-doping.
Ukuhambelana nokuthembeka
Ukulungelelanisa imiboniso emininzi
Ihambelana ne-4H-SiC, i-6H-SiC homoepitaxy, kunye ne-GaN-on-SiC iinkqubo ze-heteroepitaxy, inkxaso ye-N / P yodidi lwe-doping (njenge-N₂, i-Al doping).
Ukugcina ubomi obude
Ubunzima be-silicon carbide coating ifikelela kwi-430 Gpa 4pt bend, i-1300 ℃, ukuchasana nokukhukuliseka kwamasuntswana kwanda ngamaxesha angaphezu kwama-3, ubomi benkonzo yetreyi enye budlula iiyure zenkqubo ye-5000, kwaye iindleko zokusetyenziswa ngokubanzi ziyancipha.
Imeko yokusetyenziswa kwesicelo
Isixhobo samandla seSiC semoto
Imodyuli ye-5G RF yangaphambili
Iinkqubo ze-Photovoltaic kunye nokugcinwa kwamandla
IiNkcazo zoBugcisa Ushwankathelo
| umcimbi | Specification |
| Isiseko sezinto | I-Isostatic yococeko oluphezulu lwegraphite (ubunyulu> 99.9995%) |
| Itekhnoloji yokwambathisa | I-Chemical vapor deposition (CVD) ye-silicon carbide |
| Ubungakanani bewafer | 4/6/8 intshi (inokwenziwa ngokwezifiso) |
| Ubushushu obuphezulu bokusebenza | 1650°C (imo engqongileyo yerhasi engasebenziyo) |
| Ubushushu obufanayo | ≤±1.5°C (i-intshi eyi-6-intshi exwebileyo, inkqubo yemeko ezinzileyo) |
| Ukwaleka ubukhulu | 50-500 μm (Ukulungiswa, ±10 μm ukuchaneka) |
Ithuba elihle lokhuphiswano
Ukuhambelana kwenkqubo: Ngoyilo lwangaphambili oluhambelanayo lwezixhobo ze-ASM, ixesha lohlengahlengiso lwentsimi ye-thermal kunye nokuhamba komoya kuyancitshiswa.
Ukuzibophezela kokungcoliseka kwe-Zero: Iingubo ze-SiC zidlula i-SEMI yokufumanisa ukungcola okusemgangathweni kwesinyithi (Fe, Ni, njl <1ppb).
Ukugcinwa kokuphendula ngokukhawuleza: Isakhiwo se-tray ye-modular, inkxaso yokutshintshwa kwe-intanethi kunye nenkxaso yobugcisa.