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I-SiC yokugquma iGraphite Barrel Suceptor
Iinkcukacha ngokukhawuleza:
1. Amanye amagama: iEpitaxial furnace graphite barrel, iSiC coated wafer tray,wafer susceptor barrel type,graphite susceptor.
2. Isicelo: Kwinkqubo yokukhula kwe-wafer epitaxial
3. Iiparamitha ezingundoqo: I-homogeneity yentsimi yokuhamba kwegesi kunye nentsimi ye-thermal kwigumbi lokuphendula inokuphuculwa ngokusebenzisa uxinzelelo lwe-isostatic oluphezulu lwe-graphite matrix edityaniswe ne-chemical deposition deposition (CVD) i-SiC yokugqoka iteknoloji kunye nokumelana nokushisa kwe-1600℃, i-thermal conductivity ye-300W / m·K99.9995 XNUMX% kunye nokukhubazeka kwe-XNUMX% kunye nokukhubazeka kwe-XNUMX. epitaxial layer ingaba
kuncitshiswe kakhulu.
inkcazelo
I-SiC yokwambathisa i-Graphite Wafer Epitaxy Barrel Suceptor yeyona nto isetyenziswayo kwisixhobo sokukhula se-Si epitaxial, kwaye uyilo lwayo ludibanisa ukuhanjiswa kwe-thermal ephezulu yegraphite kunye nokuxhathisa okugqithisileyo kokutya kweSiC. I-substrate icocekile ephezulu ye-Sigley graphite (ubunyulu ≥99.9995%) eyenziwe yinkqubo yokucinezela isostatic. I-50μm eshinyeneyo ye-β-SiC yokugquma yafakwa kumphezulu ngenkqubo ye-CVD. Ithintela ngokufanelekileyo ukukhutshwa kokungcola kwe-matrix yegraphite kubushushu obuphezulu (1200-1800 ℃) kunye neegesi ezinobundlobongela (ezifana ne-SiH4, C3H8, kunye noH2), ukunqanda ukungcoliseka kwamaqhekezana. Uyilo lwe-barrel (yezixhobo ze-intshi ye-4/6/8) Ngokulungisa indlela yokuhamba komoya kunye nokuhanjiswa kwentsimi ye-thermal, ukufana kobunzima be-epitaxial layer kulawulwa ngaphakathi kwe-± 1.5%, kwaye ubuninzi besiphako buncitshiswe ku-<0.05cm-2. Ukongeza, i-coefficient yokwandisa i-thermal ye-SiC coating kunye ne-graphite matrix ihambelana kakhulu (4.5 × 10).-6/K vs 4.8×10-6/ K), ukuphepha i-coating cracking okanye i-particle shedding ebangelwa uxinzelelo oluphezulu lweqondo lokushisa, kunye nokuqinisekisa ukusebenza okuzinzile kwexesha elide lezixhobo. Icandelo lisetyenziswe kumgca wokuvelisa i-wafer epitaxy yabavelisi abahamba phambili be-semiconductor e-China, ixabiso le-epitaxy yesithando somlilo esisodwa liye lancitshiswa ngama-40%, kwaye imveliso yesixhobo iye yanda ukuya kwi-98%.
Umphanda wohlobo lwe-barel xa kuthelekiswa ne-pancake susceptor
| umlinganiswa | Umphanda wohlobo lombhobho | I-Pancake Susceptor |
| Ubushushu obufanayo | Ukufana okuphantsi kancinci ngenxa yokuhamba komoya okuthe nkqo kunye nemitha ye-symmetry (imbuyekezo yobushushu entsonkothileyo iyafuneka). | I-symmetry yentsimi ye-thermal iphezulu, kwaye ukufana kweqondo lokushisa kwindiza kungcono. |
| Ukuhamba kakuhle kwegesi | I-spirals yokuhamba komoya ecaleni kodonga lombhobho, kwaye ii-wafers zomphetho zibhalwa ngokulula / zifakwe. | Ukuhamba ku-perpendicular kumphezulu we-wafer, kwaye ukuhamba kunye nolwalathiso kulawulwa lula. |
| Umthamo kunye neendleko | Ukugqithisa okuphezulu, okufanelekileyo kwimveliso yobuninzi (inani eliphezulu lee-wafers ngexesha leyunithi). | Imveliso ephantsi, ilungele i-R&D/imveliso yebhetshi encinci. |
| Ukuntsokotha kwesondlo | Isakhiwo sinzima, kwaye ukucocwa kunye nokutshintshwa kuthatha ixesha elide. | Uyilo oluvulekileyo, ukugcinwa lula. |
iinkcukacha
| Iimpawu ezisisiseko ze-CVD SiC coating | |
| ipropati | Ixabiso eliqhelekileyo |
| Ulwakhiwo lweCrystal | I-FCC β isigaba se-polycrystalline, ikakhulu (i-111) ejoliswe kuyo |
| mninzi | 3.21 g / cm³ |
| ukuqina | 2500 Vickers ubunzima (500g umthwalo) |
| Ubungakanani bengqolowa | 2 ~ 10μm |
| Ucoceko lweMichiza | 99.99995% |
| Ubungakanani bobushushu | 640 uJ·kg-1·K-1 |
| Iqondo lobushushu elisezantsi | 2700 ℃ |
| Amandla oMbane | 415 MPa RT 4-point |
| Imodulus yolutsha | 430 Gpa 4pt bend, 1300℃ |
| Ukuqhuba kobushushu | 300W·m-1·K-1 |
| Ukwandiswa kweThermal(CTE) | 4.5 × 10-6K-1 |
izicelo
Isetyenziselwa inkqubo ye-silicon epitaxy/CVD.
Uninzi olusetyenziswa kwizixhobo ze-LPD zemveli okanye ze-CVD (ezifana neenkqubo zokuqala ze-Aixtron).
Ithuba elihle lokhuphiswano
Ukuchasana nommandla wokugqwala okugqithisileyo: i-β-SiC yokugqoka ixhathisa ukukhukuliseka kwe-plasma kunye ne-oxidation, kwaye ubomi bayo buphindwe ngamaxesha angama-5 ngaphezu kwe-graphite engabonakaliyo.
Ulawulo oluchanekileyo lwe-thermal field: isakhiwo se-barrel sinciphisa i-turbulence, i-thermal conductivity ihambelana ne-substrate, kwaye igwema ukungaphumeleli koxinzelelo lwe-thermal.
Umngcipheko wokungcoliswa kwe-Zero: i-substrate ye-ultra-high purity kunye ne-coating, ukungcola kwetsimbi (Fe, Al) umxholo <0.1ppm.
Inkonzo yenkqubo yonke: ukuxhasa ukusetyenzwa kwe-matrix, ukubekwa kwe-coating, uvavanyo lwentsebenzo kwindawo enye.
