Ityhubhu yeSilicon Carbide yomlilo

I-Semixlab ibonelela nge-Ultra-high-high purity SiC system tube furnace, i-semiconductor-grade-grade solutions field thermal field kunye ne-99.9999% yokucoca ubunyulu kunye nokuhanjiswa komgca opheleleyo.

Isindululo sexabiso elingundoqo

Ukubonelela ngobume be-thermal obungangcolisi-ziro bokwenziwa kwe-wafer: i-99.9% ye-SiC yococeko lwe-substrate + 99.9999% yococeko lwe-CVD yokwambathisa, idityaniswe nenkqubo epheleleyo yeSiC cantilever paddle & wafer boat system, ukuphumeza ungcoliseko lwesinyithi olungenaziro kwigumbi lenkqubo.

Amagama ahlukeneyo emveliso:

Ubushushu obuphezulu ityhubhu ye-SiC yesithando somlilo; ityhubhu ye-silicon carbide; ityhubhu ye-SiC esulungekileyo; ityhubhu ye-Silicon ye-carbide ye-diffusion

Iimpawu eziphambili:

Ukucoceka kwezinto: Isiseko se-silicon carbide kunye nococeko olungaphezu kwe-99.9%, kwaye ukucoceka emva kokugquma kwe-CVD kungaphezulu kwe-99.9999% (i-6N grade).

Ukusebenza kwe-Thermal: Ukushisa okuphezulu kwe-1650℃ (ixesha elide), i-coefficient yokwandiswa kwe-thermal: 4.6 × 10⁻⁶ / ℃, ukufana kwendawo yokushisa eqhubekayo: ± 1.5℃ (1200℃);

Amandla omatshini: Amandla okugoba 450Mpa(kwiqondo lobushushu begumbi).

Usetyenziso oluphambili

Umthwali wentsimi we-Thermal

Ukuseka indawo yobushushu ezinzileyo kunye nefanayo phakathi koluhlu lwe-1200℃ ukuya kwi-1650℃ (umahluko weqondo lobushushu kwindawo engaguqukiyo yi-≤±1.5℃)

Qinisekisa iimeko ze-thermodynamic zeenkqubo ezifana nokusasazwa, i-oxidation kunye nokukhupha.

Umqobo wokwahlulwa kongcoliseko

Vimba ukusasazwa kwee-ion zetsimbi (ezifana ne-Fe / Ni / Cu, njl.) ngokusebenzisa izinto ezicocekileyo (ezifana ne-SiC).

Ukuthintela ukungcola phakathi kweegesi zenkqubo kunye nokusingqongileyo kwangaphandle.

Inkqubo itshaneli yegesi

Lawula ngokuchanekileyo ulwalathiso lokuhamba kunye nokuhanjiswa kweegesi zokuphendula (ezifana ne-O₂/N₂/SiH₄, njl.)

Ukufezekisa ukusabela okufanayo kwesigaba segesi kumphezulu we-wafer (njengokukhula kweSiO₂).

Ukugquma kwe-Photovoltaic: Inkxaso ye-TOPCon / i-HJT iseli ye-PECVD inkqubo yokuthutha i-wafer.

Iziganeko zesicelo

● Epitaxy

● I-Oxidation / Diffusion

● Inkqubo yeLPCVD/PECVD

● Ukudityaniswa kwee-semiconductors ezihlanganisiweyo ze-III-V

Izisombululo kumanqaku entlungu yoshishino

Izisombululo zethu zilungisa iintlungu zabathengi bethu:

1. I-high-temperature process particle contamination: I-6N yokwambathisa iibhloko zemvula yokungcola.

Ukutshintshwa rhoqo kwe-SiC kumacandelo e-quartz kwandisa ukuxhatshazwa kwe-corrosion ngamaxesha e-8.

2. Uyilo lwe-CTE oluhambelanayo lokwandiswa kwe-thermal ukungalingani kwamacandelo e-thermal field kulo lonke uchungechunge lwezinto ze-SiC.

3. I-Ultra-polished surface treatment of contamination of metal on the back of the wafer (Ra 0.2μm).

Iinzuzo eziphambili zecandelo leenkcukacha zobugcisa:

1. ityhubhu yeSiC yesithando somlilo - Isiseko sokucoceka kwezinto: 99.9% i-silicon carbide ye-sintered

▶ Ukumelana nokothuka kobushushu kongezwa ngamaxesha ama-3 (ukupholisa ngokukhawuleza> 1600℃)

I-coefficient yokwandiswa kwe-thermal iphantsi njenge-4.6×10⁻⁶/℃

I-Nanoscale coating - CVD deposition ye-6N-grade high-purity SiC (99.9999%)

▶ Ukuthintela ukusasazwa kweentsimbi ezifana neFe kunye neNi

▶ Uburhabaxa bomphezulu uRa <0.5μm

2. SiC wafer Boat - Iyahambelana 12-intshi wafers

-Uyilo oluthwele umthwalo onamanqwanqwa amaninzi

▶ I-100% ehambelana ne-thermal kunye neetyhubhu zesithando somlilo

Izinga lokungcoliseka kwe-wafer lingaphantsi kwe-0.01 ppb

3. I-Cantilever paddle system - isostatic graphite substrate +SiC coating

- Ukuchaneka kolungelelwaniso oluzenzekelayo ±0.1mm

▶ Ubomi bokuxhathisa izinambuzane > amaxesha angama-100,000

Ukungcangcazela kothumelo kungaphantsi kwe-5μm

Iimpawu eziphazamisayo zobuchwepheshe

Uguquko lwePurity

Inkqubo yokukhusela enamanqanaba amabini

Umaleko wesiseko yi-99.9% SiC → ukwakha isakhelo samandla aphezulu

I-6N-level CVD-SiC kuluhlu olusebenzayo yenza i-atomic-level etywiniweyo.
umqobo

Ukulawulwa kokungcola: Na / K <0.1ppm, iintsimbi ezinzima <5ppb, ukuhlangabezana neemfuno zeenkqubo ezingaphantsi kwe-28nm

System synergy inzuzo

● Ukufana kwentsimi ye-Thermal: Uyilo oluphindwe kathathu lokudibanisa i-thermal yetyhubhu yesithando somlilo + isikhephe esisicaba + i-paddle blade, umahluko weqondo lobushushu kwindawo engaguqukiyo yobushushu (> 1200℃) ngu≤±1.5℃

● Ubomi obuphindwe kabini: Isisombululo sonke sandisa ixesha lokuphila nge-40% xa kuthelekiswa nenkqubo ye-hybrid, kunye ne-MTBA edlula iiyure ze-8,000.