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Iidiski zegrafiti ezigqunywe ngeTaC ezinemingxuma zokukhula kwekristale enye yeSiC
Iidiski zegrafiti ezigqunywe yi-Semixlab Porous TaC zizixhobo ezisebenza kakuhle kakhulu ezenzelwe iinkqubo zokukhula kwekristale enye ye-silicon carbide (SiC), ngakumbi iinkqubo zothutho lomphunga ngokwasemzimbeni (PVT). Ngokudibanisa isakhiwo segrafiti esigqunywe yi-porous kunye ne-tantalum carbide coating engasebenziyo ngokwekhemikhali, ezi disks zivumela ukulawulwa kokuthutha komphunga okuzinzileyo ngelixa zikhusela i-substrate yegrafiti ekukhukulisekeni kweekhemikhali kunye nokuveliswa kwamasuntswana kwiindawo ezinobushushu obuphezulu kakhulu. Yenzelwe ukuxhasa uthutho olufana nobunzima kunye nozinzo lwentsimi yobushushu, iidiski zegrafiti ezigqunywe yi-TaC ezigqunywe yi-porous zinegalelo ekuphuculweni kolawulo lojongano lokukhula, ukuhambelana kwekristale okuphuculweyo, kunye nokunciphisa umngcipheko wongcoliseko ngexesha lokukhula kwe-SiC boule ende. Silindele ngolangazelelo umbuzo wakho.
inkcazelo
Njengoko ukukhula kwekristale enye yesilicon carbide (SiC) kuqhubeka nokukhula ukuya kwiidayamitha ezinkulu kunye nolawulo oluqinileyo lweziphene, ukuzinza kunye nobunyulu bezinto ezishushu ziye zabaluleka kakhulu kwimveliso yekristale iyonke kunye nokusebenza kwesixhobo. Iidiski zegraphite ezifakwe iiPorous TaC (Tantalum Carbide) zenziwe njengezinto ezisebenzayo eziphambili kwinkqubo yokukhula kwekristale ye-physical vapor transport (PVT) SiC, zidlala indima ebalulekileyo kulawulo lokuthuthwa komphunga, ukuzinzisa intsimi yobushushu, kunye nolawulo longcoliseko.
Kwiindawo zokukhula kwekristale enye yeSiC esebenza kumaqondo obushushu aphezulu kakhulu adla ngokudlula i-2000 °C, izinto zegrafiti eziqhelekileyo zisengozini yokukhukuliseka kweekhemikhali, i-carbon sublimation, kunye nokuveliswa kwamasuntswana xa zivezwa kwiintlobo zomphunga eziqulethe i-silicon. Iidiski zegrafiti ezifakwe i-Semixlab ezinemingxuma zijongana nale mingeni ngokudibanisa i-substrate yegrafiti enemingxuma eyenziwe ngononophelo kunye ne-TaC coating ehambelanayo, ecocekileyo kakhulu. Olu yilo lubonelela zombini ukuvuleka kwegesi okulawulwayo kunye nomqobo ongenazikhemikhali, ovumela ulawulo oluchanekileyo lwe-Si- kunye ne-C-containing vapor flux phakathi kwezinto ezivelayo kunye ne-interface ye-crystal growth.
Ngaphakathi kwindawo yokukhula, iidiski zegrafiti ezigqunywe yiTaC ezinemingxuma zisebenza njengabalathisi bokuhamba komphunga kunye nabalawuli bokusasazwa. Ulwakhiwo lwemingxuma edibeneyo luvumela ukuhanjiswa okulawulwayo kweentlobo ezingaphantsi komhlaba ngelixa kuthintelwa ukuhamba komphunga okuguquguqukayo kunye ne-gradients yoxinzelelo lwendawo. Olu thutho lobuninzi olulawulwayo lunegalelo ngokuthe ngqo kwi-interface yokukhula efanayo, ukuphuculwa kokuqina kwe-radial, kunye ne-morphology yekristale ephuculweyo. Kwangaxeshanye, i-TaC coating yahlula i-graphite engaphantsi kwintsebenziswano ngqo neekhemikhali kunye nomphunga weSi, inciphisa kakhulu ukusetyenziswa kwegrafiti, ukubola komphezulu, kunye nongcoliseko olunxulumene nekhabhoni ngexesha lokukhula okude.
Ngokwe-thermal, i-TaC's excellence melting point (≥3880℃) kunye nozinzo ziqinisekisa ukuqina kwesakhiwo kunye nokunamathela kwe-coating phantsi kokujikeleza okuphindaphindiweyo kobushushu. Uyilo olunemingxuma lunegalelo ngakumbi ekuhlengahlengisweni kobushushu obuqhelekileyo, lunceda ekuzinziseni i-axial kunye ne-radial temperature gradients ngaphakathi kwendawo eshushu. Olu hlengahlengiso lobushushu luluncedo ngokukodwa ekukhuleni kwe-SiC boule enobubanzi obukhulu, apho uzinzo lwe-interface kunye nolungelelwaniso lobushushu lubalulekile ekunciphiseni ukwakheka kwe-micropipe, ukusasazeka kwe-basal plane, kunye nezinye iziphene ze-crystallographic.
Ngokwembono yokulawula ungcoliseko, iidiski zegrafiti ezigqunywe yiTaC ezinemingxuma zinika inzuzo enkulu kunezixhobo ezingagqunywanga okanye ezigqunywe ngendlela eqhelekileyo. Umaleko weTaC oxineneyo uthintela ngempumelelo uthuli lwegrafiti kunye nokukhululwa kwamasuntswana, uxhasa amanqanaba angaphantsi okungcoliseka kunye neendawo zokukhula ezicocekileyo. Oku kuthetha ukuba ikristale icocekile, umngcipheko wokuncipha kwe-nucleation yesiphako, kunye nesivuno esiphezulu se-wafer esezantsi.
I-Semixlab iyila kwaye ivelise iidiski zegrafiti ezigqunywe yiTaC ezineembobo zisebenzisa iinkqubo zokugquma ezilawulwayo ezilungelelanisa ubukhulu bokugquma, ukugcinwa kweembobo, kunye nobunzulu bokungena kwengubo. Oku kuqinisekisa uzinzo lokuphuma kwamanzi ixesha elide ngaphandle kokuvaleka kweembobo, kugcina iimpawu zokuthutha umphunga ezihambelanayo kulo lonke ixesha lokusebenza kwecandelo. Imveliso nganye yenziwe ngokuhambelana kuzo zonke iindlela eziphambili zoyilo lwe-SiC PVT furnace kwaye ifanelekile kuzo zombini iinkqubo zokukhula kwekristale yophando kunye nokuveliswa komthamo.
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Ivenkile yeeMveliso zeSemixlab
