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I-Semixlab yeGlasi enekhabhoni eqatywe i-graphite substrate
| Indawo yokuqala: | iTshayina |
| Igama lebrand: | Semixlab |
| Inani Model: | Ikhabhoni yeglasi-01 |
| yokuqinisekisa: | ISO9001 |
| Isixa esincinci soMyalelo: | Kuxhomekeke kuthethathethwano |
| ixabiso: | UQhagamshelwano malunga neNtelekelelo yamaxabiso eLungiselelweyo |
| Iinkcukacha zoPakethe: | Iphakheji yokuthumela ngaphandle eqhelekileyo |
| Ixesha lokuzisa: | Ixesha lokuhanjiswa: Iintsuku ze-15-30 emva kokuqinisekiswa koMyalelo |
| Immimiselo yokuhlawula: | T / T |
| Supply Ukubanako: | Iitoni ezili-10/ngenyanga |
inkcazelo
Iglasi yekhabhoni egqunywe ngegraphite substrate yimathiriyeli edityanisiweyo enegraphite njengesiseko semathiriyeli, ifakwe okanye igqunywe ngekhabhoni yeglasi, edibanisa eyona ndlela ibalaseleyo yokuqhuba kunye nokumelana nobushushu obuphezulu begraphite kunye nokungangeni kweekhemikhali eziphezulu, ukuxinana kunye neempawu zomphezulu ogudileyo wekhabhoni yeglasi.
Ukuhlangabezana neemfuno eziguquguqukayo zolu shishino, siye saphuhlisa ipotfoliyo yeemveliso ezahlukeneyo exhotyiswe ngokupheleleyo ukuhlangabezana neemfuno zeteknoloji yokugquma isizukulwana esilandelayo, siqinisekisa ukuba sinokubonelela ngezisombululo ezihambelana nenkqubela phambili yamva nje kwicandelo le-semiconductor.
isicelo:
Ngokombono wemimandla yesicelo, uluhlu lwesicelo se-graphite yeglasi efakwe kwikhabhoni ibanzi kakhulu. Kwintsimi yezixhobo ze-semiconductor, ngenxa yokumelana nobushushu obuphezulu, ukuxhathisa i-oxidation kunye ne-conductivity, iye yaba yinto efanelekileyo yokuvelisa iibhodi zesekethe ezidibeneyo ezisebenzayo kunye nezixhobo zombane. Kwintsimi yezinto eziqhubekayo zokuphosa, i-glassy carbon coated graphite isetyenziswe ngokubanzi kwi-crystallizer ye-crystallizer yemishini yokuphosa eqhubekayo ngenxa ye-lubricity yayo efanelekileyo kunye nokumelana nokushisa okuphezulu, ukuphucula ngokufanelekileyo ukuphumelela okuqhubekayo kunye nomgangatho we-ingot. Ukongeza, kwimimandla ye-aerospace, ishishini lenyukliya, isinyithi, ishishini lemichiza, njl.
Iinkonzo ezinokubonelelwa:
Uhlalutyo lwemeko yesicelo somthengi, izinto ezihambelanayo, ukusombulula iingxaki zobugcisa.
Iprofayile yekhampani:
I-Semixlab ineebhubhoratri ze-2, iqela leengcali ezineminyaka engama-20 yamava ezinto eziphathekayo, kunye ne-R & D kunye nemveliso, ukuvavanya kunye nokuqinisekisa amandla.
Iinkcukacha ngokukhawuleza:
a. esona sicelo siphambili: I-glass carbon coated graphite substrates inoluhlu olubanzi lwezicelo kwiinkalo ezahlukeneyo ezifana ne-semiconductors, amandla, ubugcisa obukhethekileyo bokugquma kunye nobuchwepheshe obuvelayo ngenxa yeempawu zabo ezizodwa kunye neekhemikhali. Ngokuqhubela phambili okuqhubekayo kobuchwepheshe, uluhlu lwesicelo kunye nokubaluleka kulindeleke ukuba kwandiswe ngakumbi.
b. Inkqubo yokulungiselela:
Inkqubo yokwaleka:
I-graphite substrate igxininiswe kwisisombululo se-carbonizable polymer precursor kunye ne-coating efanayo yenziwe nge-spin coating, i-spray coating okanye i-chemical vapor deposition (CVD).
Ubushushu obuphezulu bekhabhoni:
Unyango oluphezulu lweqondo lokushisa (1000-3000 ° C) kwi-atmospheric ye-inert (efana ne-argon) iguqula i-polymer ibe yikhabhoni yeglasi, ehlanganiswe ngokuqinileyo kwi-graphite substrate.
c. Iiparameters ezingundoqo:
ukutyeba kokutyabeka (kukhethwe ngokwemeko-bume edlayo, enobukhulu obuyi-50-100μm); i-substrate density graphite (uxinzelelo oluphezulu luxhathisa ngakumbi ekungeneni); umoya wokusetyenziswa (i-oxidizing / inert); Izinga lokufudumala ≤10℃/min (ukunciphisa uxinzelelo lwe-interface); Ukusebenzisa iqondo lobushushu emoyeni ≤600℃ (ukhuseleko lwegesi engasebenzi luyafuneka ukuba lugqithise)
iinkcukacha
Uthelekiso lwentsebenzo engundoqo
| ye parameter | Ikhabhoni eneglasi eqatywe i-graphite substrate | Igraphite ecocekileyo | Ikhabhoni yeglasi ecocekileyo |
| Ubushushu obuphezulu bokusebenza | 2800℃ kwiatmosfera engasebenziyo, 600℃ emoyeni | 3000℃ kwiatmosfera engasebenziyo, 600℃ emoyeni | 3000℃ kwiatmosfera engasebenziyo, 500℃ emoyeni |
| Ukumelana ukothuka Thermal | Igqwesileyo (i-graphite substrate ikhusela uxinzelelo lwe-thermal) | Zintle | Poor |
| HF ukuxhathisa umhlwa | Okugqwesileyo (ukhuseleko lokugquma) | Poor | Zintle |
| Ukucwangcisa ubunzima | Phakathi (ifuna inkqubo yokwambathisa) | Kulula ukuqhubekeka | Kunzima ukusetyenzwa (i-brittle kakhulu) |
| Iindleko eziPhakathi | (≈ 2-3 amaxesha egraphite esulungekileyo) | low | phezulu |
izicelo
Iinkalo zesicelo eziphambili
| Ulwalathiso lwesicelo | Imeko eqhelekileyo | ixabiso isisombululo |
| Ukwenziwa kweSemiconductor | I-wafer yonyango yokushisa i-susceptor | Thintela igraphite ekukhupheni ukungcola kunye nokungcolisa iziphaluka zesilicon |
| Izikhephe zekhabhoni zeglasi | Kwinkqubo ye-Bridgman okanye ye-Czochralski, isetyenziselwa ukukhulisa i-crystals enye ye-GaAs kunye ne-SiC. | Iikhrabhoni zekhabhoni zeglasi ziyakwazi ukumelana nobushushu obuphezulu obungaphezulu kwe-2000 ° C kwaye zibe nokumelana nobushushu obugqwesileyo. |
| Amacandelo aphezulu e-epitaxial reactor | Njenge-susceptor ye-substrates okanye njenge-liner yamagumbi okuphendula | Xa ukhulisa i-GaN kunye ne-SiC epitaxial layers, ukungazinzi kwemichiza yeglasi yekhabhoni kunokuthintela ukusabela kunye nezandulela. |
| I-Plasma Etching Environment | I-Electrode okanye i-ring focus ye-etching reaction room | Ukumelana nokukhukuliseka kwe-plasma kunye nokukhululwa kwe-particle ephantsi |
| Ukusetyenziswa okutsha kweFotomask Substrates | I-EUV kunye nee-photomasks ze-e-beam | I-coefficient yokwandiswa kwe-thermal isondele kwi-zero, engcono kuneglasi ye-quartz yendabuko. I-conductivity yombane inokuchitha ngokwendalo intlawulo ye-electron beam |
| Ukuphathwa kwesinyithi esinyibilikisiweyo | I-Aluminiyam i-electrolytic cell cathode yokwambathisa | Ukumelana nomhlwa otyhidiweyo we-aluminiyam, ukwandisa ubomi benkonzo |
| Electrochemical electrode | I-Fuel cell bipolar plates | Umaleko wekhabhoni yeglasi yokhuseleko lomhlwa kunye ne-graphite substrate yokuqhuba umbane |
| Isithando somlilo esiphezulu se-vacuum | Umaleko wokhuselo lwento yokufudumeza | Ukunciphisa i-graphite volatilization kwiqondo lokushisa eliphezulu |
| Izixhobo zokuhlalutya | Amacandelo omthombo we-ion ye-spectrometer yobuninzi | Umphezulu wococeko oluphezulu unciphisa ingxolo yangasemva |
Uqinisekiso lwekhonkco leekholoji
Ukuqinisekiswa kokuthembeka okugqithisiweyo ngabavelisi abafana neSinosteel
Iqumrhu kunye neFangDa.
Inkqubo yemveliso eqhelekileyo
Khetha i-substrate (i-graphite imathiriyeli ene-porosity ye-10% -15%) → Ukucoca umphezulu (1000-2000 rpm/min, 30-60min) kunye nokufudumeza kwangaphambili (150-200 ℃, 1-2h) → Ukulungiswa kwesisombululo se-phenolic resin (200-500, 30 rpm-minity) 60-500mpa·s) → unyango lwediphu(1000-30℃, 50-2h, uxinzelelo: 4-5mpa) → ukunyanga ubushushu obuphantsi(10-150℃, 200-2h) → unyango lweCarbonization(4℃, 1000-1h, 2mpaka ℃ ℃, 0.01Mpa)it 10℃)
Ngobuchule obuqhubekayo betekhnoloji kunye nophuhliso lwemveliso, i-Semixlab's glassy carbon coated graphite substrate izuze impumelelo kwizinto zegraphite zasekhaya, ukuhlangabezana nemfuno ekhulayo yeglassy carbon coated graphite kumasimi abukhali anje ngezithuthi zamandla amatsha, iinkqubo zokugcina amandla, kunye nezixhobo zesemiconductor. Ukuba ufuna ukufumana iinkcukacha zamaphepha amhlophe obugcisa okanye ulungiselele uvavanyo lwesampulu, nceda uqhagamshelane neqela lethu lenkxaso yobugcisa.
Ithuba elihle lokhuphiswano
Semixlab Glassy ikharbhon eqatywe isubstrate yegraphite Iinzuzo ezingundoqo
Ukumelana Chemical:
Ukumelana ne-acids ezomeleleyo, i-alkalis eyomeleleyo, kunye neentsimbi ezityhidiweyo (ezifana ne-Al kunye ne-Cu).
Ukucoceka komphezulu:
Ukucoceka okuphezulu (umxholo wothuthu <0.01%).
I-Antioxidant:
Ubushushu bokumelana ne-oxidation ebusweni bonyuke ukuya kuma-500-600 ℃.
Amandla oomatshini:
Ukwandisa ukuqina komphezulu (ukunciphisa ukunxiba).
Iindleko:
I-30-50% ingaphantsi kuneemveliso zekhabhoni zeglasi ecocekileyo.
Iinkonzo zethu
Ivenkile yeeMveliso zeSemixlab
